Professor Tony Peaker

University of Manchester, UK

Deep Level Transient Spectroscopy and Shockley-Read-Hall Kinetics

Abstract

Some defects, and certain impurities, can create electronic states within the band gap of a semiconductor. These can have dramatic effects on the electrical properties by acting as recombination or generation centres. Examples of concern to device applications are recombination centres reducing the efficiency of solar cells or LEDs and generation centres reducing performance of DRAM or increasing the reverse leakage of power devices. In many cases it is possible to estimate the effect that such defects will have on device performance by considering Shockley -Read-Hall kinetics. In order to do this some of the defect parameters must be known. In this presentation I will review how appropriate measurements of the defect energy depth, concentration and carrier capture cross sections can be measured for the SRH calculation.

Deep Level Transient Spectroscopy and Shockley-Read-Hall Kinetics (PDF, 779KB)

Electrical techniques for the measurement of deep states (PDF, 752KB)

Biography

Professor Peaker is the Emeritus Professor of Electronic Materials in the School of Electrical Engineering and Electronics at Manchester. His research specialty is defects in semiconductors and the impact they have on devices.

After spending 8 years as the manager of Ferranti's Photon Devices Group he joined the University in 1975. He was involved in the early work to develop lasers and detectors for long distance fibre optic communications in the 1.33µm and 1.54 µm bands and III-V devices for low noise amplifiers.

In 1983 he was granted leave to spend a year at Monsanto (now MEMC) in St Louis USA on silicon materials research. When he returned to Manchester much of his subsequent work was focused on defects in silicon, germanium and silicon germanium.

In 1997 he was granted a Royal Academy of Engineering Foresight Award to spend a year at the joint French-German (CNRS/Max Plank Institute) high magnetic field laboratory in Grenoble working on novel methods to study defects in semiconductors and there worked extensively on the realization of a working system for Laplace (high resolution) Deep Level Transient Spectroscopy (LDLTS).

In the last few years he has devoted much of his time to the study of the electronic properties and application of quantum dot nanostructures in several different material systems using the techniques pioneered during the visit to Grenoble which was developed into a practical system, firstly under an EU project. The system was finally transformed into an easily used versatile LDLTS system under a UK EPSRC award.